RFQ/BOM 0 Entrar / Registro

Selecione seu local

The accelerated domestic process of China core has stimulated the acceleration of the strategic layout of NAND Flash and DRAM

Publicados :11/12/2019 01:37:15

Clique em Contar:2103

December 9, 2020 SK hynix will carry out a series of personnel transfer and business restructuring, from development, manufacturing, and business post-processing and other unified management, will integrate DRAM and NAND Flash development departments together.

After the restructuring, SK hynix's chief semiconductor technology specialist Jin kyo-won will be promoted to President of development and manufacturing, where he will be responsible for improving operational efficiency for DRAM and NAND Flash from development to mass production.

SK hynix is an important supplier of NAND Flash and DRAM. According to ChinaFlashMarket data of China's Flash market, SK hynix has a market share of 28.4% in the Q3 quarter of 2019, ranking the second globally.NAND Flash has a 9.6 percent market share, ranking sixth globally

As the second largest DRAM supplier in the world, SK hynix announced in October 2019 that it had developed the 16Gbit DDR4 using the third-generation 10nm (1znm) process. Compared with the second-generation (1ynm) product, SK hynix has achieved a productivity increase of about 27%

Competing with samsung and micron, samsung announced as early as March 2019 that it would adopt 1znm technology to mass produce 8Gb DDR4 in the second half of the year, with a productivity increase of more than 20%.Meguiar's also mass-produced the 1znm 16Gb DDR4 in August.Samsung, SK hynix and meguiar's DRAM have all entered the third generation of 10nm process technology. With the continuous improvement of technology, the difficulty of mass production has also increased. Further development will use EUV process.

In the NAND Flash market, samsung, SK hynix have announced the new generation of 128-layer 3D TLC NAND has begun mass production or sample delivery, 2020 western data, kaxia, meguiar's and other 128-layer 3D NAND will also be available, Intel will even launch in 2020 144 layer QLC NAND, the competition between industry players in full fire.

In 2016 and 2017 NAND Flash after prices rose sharply, prices fell again in 2018 and the first half of 2019, by the end of the third quarter, samsung, armoured spiderman, western digital, micron, SK hynix, Intel and other NAND Flash Q3 quarter sales, though a month-on-month increase, but in terms of profit performance still fell, western digital and armoured man even severe losses.

SK hynix also faces a revenue challenge, with revenues down 40 per cent year-on-year to won6.8tn in the third quarter of 2019.Net profit was 0.495 trillion won, down 89% year on year and the lowest since the second quarter of 2016, with DRAM revenue accounting for 77% and NAND Flash for 20%.

In addition to facing cyclical changes in the industry, the advancement of DRAM and NAND Flash technology also makes it more difficult for enterprises to invest more money and make profits.As NAND Flash prices hit bottom, as well as to see prosperous market demand in 2020, the recent NAND Flash market is turning a corner, ChinaFlashMarket China Flash market analysis, market prices, not only channel enterprise demand, the original factory has announced price increases for Q1 2020 parts products, PC OEM market prices or will start up, and mobile terminal product price or price response Q2 2020.

With the acceleration of the localization of chips in China and the entry of new entrants, the battle is heating up again. For SK hynix, it will stimulate the acceleration of the strategic layout of NAND Flash and DRAM to some extent.Before the next wave of storage market rise, SK hynix will combine the DRAM and NAND Flash r&d departments, which will not only help improve the level of technology research and development, stabilize the market position, but also effectively cooperate with and respond to the cyclical changes in the storage market, and improve the ability of enterprises to profit.