novembro 04, 2025
109
In today’s rapidly evolving electronics industry, efficient power management components like the PHT4NQ10LT-135 N-channel MOSFET from NXP Semiconductors are critical for high-performance designs. With a 100V drain-source voltage, 3.5A current capacity, and ultra-low 250mΩ on-resistance, this MOSFET excels in switching applications across automotive, industrial, and medical systems. As energy efficiency standards tighten, the PHT4NQ10LT-135’s logic-level compatibility and compact SOT-223 package make it a standout choice. Read on to discover its key parameters, selection tips, and how it compares to alternatives.
| Parameter | Value | Test Condition | Source |
|---|---|---|---|
| Transistor Polarity | N-Channel | - | NXP Datasheet |
| Drain-Source Voltage (VDS) | 100V (130V typ) | - | JESD-30 |
| Continuous Drain Current (ID) | 1.75A (3.5A max) | 25°C | IEC 60747-8 |
| On-Resistance (RDS(on)) | 250mΩ | VGS=5V | NXP Datasheet |
| Threshold Voltage (VGS(th)) | 2V | ID=250µA | NXP Datasheet |
| Power Dissipation (PD) | 6.9W | 25°C | JEDEC 51-3 |
| Operating Temperature | -65°C to +150°C | - | MIL-STD-883 |
When choosing between the PHT4NQ10LT-135 and similar MOSFETs, consider these factors:
Voltage Requirements: Ensure VDS exceeds your circuit’s maximum voltage by 20-30% for safety margin.
Current Capacity: Account for peak currents (3.5A for PHT4NQ10LT-135) and thermal derating at high temperatures.
Switching Speed: This device’s low gate charge (Qg) enables fast switching in PWM applications.
Package Constraints: The SOT-223 (SC-73) package balances thermal performance with PCB space efficiency.
Logic-Level Compatibility: The 2V threshold allows direct drive from 3.3V/5V microcontrollers.
| Model | VDS (V) | ID (A) | RDS(on) (mΩ) | Package | Key Advantage |
|---|---|---|---|---|---|
| PHT4NQ10LT-135 | 100 | 3.5 | 250 | SOT-223 | Best cost-performance ratio |
| IRLZ44N | 55 | 47 | 22 | TO-220 | Higher current |
| 2N7002 | 60 | 0.3 | 5000 | SOT-23 | Smaller footprint |
Medical Imaging: Low-noise power switching in portable ultrasound devices.
Automotive Systems: ECU load switching with -65°C cold-cranking capability.
Industrial Automation: Relay/Motor drivers in PLCs (IEC 61131-2 compliant).
Power Management: DC-DC converters and battery protection circuits.
According to MarketsandMarkets, the power MOSFET market is projected to grow at 6.8% CAGR through 2027, driven by:
Electrification in automotive (48V mild-hybrid systems)
5G infrastructure requiring efficient RF power amplifiers
Industrial IoT devices demanding compact power solutions
The PHT4NQ10LT-135 addresses these needs with its balance of voltage rating, current handling, and SMD compatibility.
Yes, it complies with RoHS 2.0 (Directive 2011/65/EU) and has a tin (Sn) termination finish.
The "-135" suffix indicates tape-and-reel packaging for automated assembly, while the base part number is for cut tape.
Yes, its built-in diode provides protection against back-EMF from relays or motors.
Use at least 1oz copper with a 10mm2 pad under the SOT-223 tab (per JEDEC 51-5).
As of our latest update, it’s marked "Obsolete" by NXP but remains available through authorized distributors like Censtry.
Next-generation MOSFETs are expected to feature:
Wide-bandgap materials (SiC/GaN) for higher efficiency
Integrated current/temperature sensors
3D packaging for improved thermal performance
The PHT4NQ10LT-135 remains relevant for cost-sensitive designs through 2025+ due to its proven reliability.
Need the PHT4NQ10LT-135 for your project? Contact our technical sales team at sales@censtry.com for pricing, samples, and design support. We provide full datasheets, SPICE models, and application notes to streamline your component selection process.
