IRFB23N20DPBF

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Direção：

The IRFB23N20DPBF power MOSFET sets a new standard in high-current applications with its impressive specifications and reliable performance. With a drain-source voltage of 200V and a continuous drain current of 23A, this MOSFET delivers exceptional power handling capabilities for various tasks. Its low on-resistance of 0.092 ohms minimizes power losses, allowing for improved efficiency and reduced operating costs. Additionally, the MOSFET's TO-220AB package ensures optimal thermal performance and high voltage insulation, making it a safe and reliable choice for demanding environments. With key specifications such as a gate threshold voltage of 2V, gate-source voltage of ±20V, and total gate charge of 40nC, the IRFB23N20DPBF offers easy control and fast switching speeds, making it a top choice for high-performance applications