MADR-009190-000100

The MADR-009190-0001 four channel driver is used to translate TTL control inputs into gate control voltages for GaAs FET microwave switches and attenuators. It utilizes high-speed analog CMOS technology to achieve low power dissipation at moderate to high speeds, making it suitable for various microwave switching applications. The driver provides four pairs of complementary outputs, each capable of driving a maximum of ±35 mA into a load. Additionally, with proper capacitor selection and current setting resistors, additional spiking current can be achieved. The driver outputs can be switched between different voltages, such as 0 to +2.0V for FET control devices and +5V & -5V for driving PIN Diode circuits. The actual output voltages may be lower when driving large currents due to the resistance of the output devices.

The MADR-009190-0001 driver utilizes high-speed analog CMOS technology to achieve low power dissipation at moderate to high speeds.

The output voltages of the MADR-009190-0001 driver are optimized for FET control devices and PIN Diode circuits in the following ways: 1. For FET control devices, the output HIGH level is optionally set to 0 to +2.0V relative to GND to optimize the intermodulation products at low frequencies . 2. When driving PIN Diode circuits, the outputs are nominally switched between +5V and -5V . 3. It is important to note that the actual driver output voltages will be lower when driving large currents due to the resistance of the output devices . Therefore, the MADR-009190-0001 driver provides optimized output voltages for both FET control devices and PIN Diode circuits to ensure proper functionality and performance.