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FQPF10N60C

MOSFET 600V N-Ch Q-FET advance C-Series

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FQPF10N60C

MOSFET 600V N-Ch Q-FET advance C-Series

  • Fabricante:

    ON

  • Ficha de dados:

    FQPF10N60C datasheet

  • Pacote/Caso:

    TO-220-3

  • Categoria de Produto:

    Chips de IC

  • RoHS Status:

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Estoque:2000 PCS

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FQPF10N60C Substituição de peças

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FQPF10N60C Detalhes do produto

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FQPF10N60C

Description

Introduction to FQPF10N60C: FQPF10N60C is a high-performance N-channel power MOSFET developed by ON Semiconductor (now part of Microchip). Key features include:
QFET® technology: This enhances the gate control, reducing on-state resistance and improving switching speed.
600V rating: The device can withstand high voltage differences, making it suitable for various power applications.
TO-220FP-3 package: The compact design eases integration on circuit boards while providing adequate thermal management. This MOSFET is ideal for applications requiring fast switching speed, low on-state resistance, and efficient heat dissipation.

Features

The FQPF10N60C is a high-power N-channel QFET Power MOSFET designed for demanding applications. Its key features include:
Wide operating range: The MOSFET can handle varying input voltages and currents.
Low input current drain: This helps reduce power consumption when the device is not in use.
High power factor correction (PFC): For efficient power conversion, especially in high-voltage applications.
Built-in surge protection: Ensures the device's safety from sudden voltage spikes.
Compact package design and low EMI emissions: These features help minimize space requirements and reduce electromagnetic interference. In summary, the FQPF10N60C Power MOSFET is designed for high-power efficiency, surge protection, and compact form factors.

Package

The FQPF10N60C has a TO-220FP-3 package type.

Pinout

The FQPF10N60C is a N-channel power MOSFET with QFET® technology. It has a TO-220FP package. As for the pin count and function, a typical TO-220 package has three pins:
Drain (D): The output terminal where current flows out of the device.
Gate (G): The control terminal that when connected to a positive voltage relative to the source, allows current to flow through the device.
Source (S): The input terminal where current enters the device. In this case, since FQPF10N60C has a TO-220FP package, it would have the same three-pin configuration as the standard TO-220 package.

Manufacturer

The manufacturer of the FQPF10N60C is ON Semiconductor, which is a global technology leader in semiconductors. ON Semiconductor focuses on providing innovative solutions for various industries, including automotive, industrial, and communication systems.

Applications

The FQPF10N60C is a power MOSFET designed for high voltage (600V) and current (9.5A). Key application areas include:
Motor control: In electric vehicles or industrial machinery.
Power supplies: As part of linear or switching regulators.
Lighting systems: For high-power LED lighting applications. Ensure proper heat dissipation, isolation, and current limiting when using this MOSFET in specific applications.

Equivalent

The equivalent product of FQPF10N60C by ON Semiconductor could be another N-channel power MOSFET with a similar voltage rating and high current capacity, such as the FQP30N60 or a comparable model.

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